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I NTEGRATED C IRCUITS D IVISION
1.4 Recommended Operating Conditions
MXHV9910
Parameter
Input Voltage Range
PWMD Frequency
Operating Temperature
Symbol
V I N
f PWMD
T A
Minimum
8
-
-40
Nominal
-
500
-
Maximum
450
-
+85
Unit
V DC
Hz
°C
1.5 Electrical Characteristics
Unless otherwise specified, all electrical specifications are provided for T A =25 ? C.
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
Input
Input DC Voltage Range
Shut-Down Mode Supply Current
Maximum Voltage to V DD Pin
DC Input Voltage
PWMD to GND, V I N =15 to 450V
External Voltage applied to V DD Pin
V IN
I INSD
V DDmax
8
-
-
-
0.3
-
450
0.6
12
V DC
mA
V
Regulator
V I N =15V to 450V,
Internal Voltage Regulator
I DD(ext) =0,
V DD
7.2
7.8
8.4
V DC
GATE Output=Open
V DD Current Available
for External Circuitry
V DD Load Regulation
-
V I N =15V, I L =1mA
I DD(ext)
? V DD
-
-
-
-
2
200
mA
mV
PWM Dimming
PWMD Input Low Voltage
PWMD Input High Voltage
PWMD Pull-Down Resistance
V I N =8V to 450V
V I N =8V to 450V
V I N =12V, V PWMD =V DD
V E N (low)
V E N (high)
R E N
-
2.4
70
-
-
115
0.5
-
150
V
k ?
Current Sense Comparator
Current Sense (CS) Input Current
CS Low
CS High
Current Sense Threshold Voltage
Current Sense Blanking Interval
Delay from CS Trip to Gate Low
CS=0V
CS=V DD
-40 ° C < T A < 85 ° C
R T =400k ?
R T =400k ?
I IL
I IH
V CS(high)
t BLA N K
t DELAY
-
-
200
-
-
-45
0
-
400
300
-90
±15
280
-
-
? A
mV
ns
ns
Oscillator
Oscillator Frequency (Gate Driver)
R T =400k ?
f S
51
64
77
kHz
Gate Driver
Gate High Output Voltage
Gate Low Output Voltage
Gate Output Rise Time
Gate Output Fall Time
I OUT = -10mA
I OUT =10mA
C GATE =500pF
C GATE =500pF
V GATE (hi)
V GATE (lo)
t RISE
t FALL
V DD -0.3
-
-
-
-
0.03
16
7
-
0.3
-
-
V
ns
1.6 Thermal Characteristics
Parameter
Thermal Resistance,
Junction-to-Ambient
Package
SOIC-8 With Thermal Pad (BE) 1
SOIC-8 W/O Thermal Pad (B)
Symbol
R ? JA
Minimum
-
-
Typical
50
128
Maximum
-
-
Unit
°C/W
1
Use of a four-layer PCB can improve thermal dissipation (reference EIA/JEDEC JESD51-5).
4
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